27.1 Positive Bias Temperature Instability Degradation of InGaAs n-MOSFETs with Al2O3 Gate Dielectric

CP measurements show that PBTI stress induced interface trap area density ΔNit in InGaAs/Al2O3 n-MOSFET is very small and has power law time evolution At in the stress phase, and is partially recovered in the recovery phase. However the DC Is-Vg measurements show large degradations of negative ΔVg and sub-threshold swing S in the sub-threshold region and are recovered in the recovery phase, also show degradation of positive ΔVg in the on-current region and continuing degradation in the recovery phase until reaching a stable state. The Is-Vg degradation is mainly contributed by generation of near interface slow oxide traps under stress with recoverable donor trap energy density ΔDSOX in the InGaAs energy gap with a tail extended to the conduction band energy, and permanent acceptor trap energy density ΔDSOX in the conduction band energy with a tail extended to the energy gap. This trap model explains all experimental details perfectly.